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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1912
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) *Wide Area of Safe Operation *Low Collector Saturation Voltage
APPLICATIONS *Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ww w
scs .i
60 V 60 V 6 V 3 A 8 A 1.75 W
UNIT
.cn mi e
ICM
Collector Current-Peak Collector Power Dissipation @Ta=25
PC Collector Power Dissipation @TC=25 TJ Junction Temperature 30
150
Tstg
Storage Temperature
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD1912
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; RBE=
60
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
B
1.0
V
VBE(on)
Base-Emitter On Voltage
IC= 0.5A; VCE= 5V
1.0
V A
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
COB
Output Capacitance
fT
Current-Gain--Bandwidth Product
w w
S 140-280
scs .i w
VEB= 4V; IC= 0
IC= 0.5A; VCE= 5V
IC= 3A; VCE= 5V
.cn mi e
70 20 40 100
100
100
A
280
IE= 0; VCB= 10V, f= 1MHz
pF
IC= 0.5A; VCE= 5V
MHz
hFE-1 Classifications Q 70-140 R 100-200
isc Websitewww.iscsemi.cn
2


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